IXBH10N300HV related parameters_IXBH10N300HV PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	BIMOSFET™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	3000 V
Current - Collector (Ic) (Max)	34 A
Current - Collector Pulsed (Icm)	88 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 10A
Power - Max	180 W
Switching Energy	-
Input Type	Standard
Gate Charge	46 nC
Td (on/off) @ 25°C	36ns/100ns
Test Condition	960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)	1.6 µs
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263

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