SKB02N60E3266ATMA1 related parameters_SKB02N60E3266ATMA1 PDF documentation_Infineon Technologies

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	6 A
Current - Collector Pulsed (Icm)	12 A
Vce(on) (Max) @ Vge, Ic	2.4V @ 15V, 2A
Power - Max	30 W
Switching Energy	64µJ
Input Type	Standard
Gate Charge	14 nC
Td (on/off) @ 25°C	20ns/259ns
Test Condition	400V, 2A, 118Ohm, 15V
Reverse Recovery Time (trr)	130 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	PG-TO263-3-2

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