SGL50N60RUFDTU related parameters_SGL50N60RUFDTU PDF documentation_ON Semiconductor

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	80 A
Current - Collector Pulsed (Icm)	150 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 50A
Power - Max	250 W
Switching Energy	1.68mJ (on), 1.03mJ (off)
Input Type	Standard
Gate Charge	145 nC
Td (on/off) @ 25°C	26ns/66ns
Test Condition	300V, 50A, 5.9Ohm, 15V
Reverse Recovery Time (trr)	100 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Supplier Device Package	TO-264-3

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