IXGT64N60B3 related parameters_IXGT64N60B3 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX3™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	64 A
Current - Collector Pulsed (Icm)	400 A
Vce(on) (Max) @ Vge, Ic	1.8V @ 15V, 50A
Power - Max	460 W
Switching Energy	1.5mJ (on), 1mJ (off)
Input Type	Standard
Gate Charge	168 nC
Td (on/off) @ 25°C	25ns/138ns
Test Condition	480V, 50A, 3Ohm, 15V
Reverse Recovery Time (trr)	41 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package	TO-268

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