IXSR35N120BD1 related parameters_IXSR35N120BD1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	70 A
Current - Collector Pulsed (Icm)	140 A
Vce(on) (Max) @ Vge, Ic	3.6V @ 15V, 35A
Power - Max	250 W
Switching Energy	5mJ (off)
Input Type	Standard
Gate Charge	120 nC
Td (on/off) @ 25°C	36ns/160ns
Test Condition	960V, 35A, 2.7Ohm, 15V
Reverse Recovery Time (trr)	40 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Supplier Device Package	ISOPLUS247™

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