APT44GA60B related parameters_APT44GA60B PDF documentation_Microchip Technology

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	POWER MOS 8™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	78 A
Current - Collector Pulsed (Icm)	130 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 26A
Power - Max	337 W
Switching Energy	409µJ (on), 258µJ (off)
Input Type	Standard
Gate Charge	128 nC
Td (on/off) @ 25°C	16ns/84ns
Test Condition	400V, 26A, 4.7Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247 [B]

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