IXDR30N120D1 related parameters_IXDR30N120D1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	60 A
Vce(on) (Max) @ Vge, Ic	2.9V @ 15V, 30A
Power - Max	200 W
Switching Energy	4.6mJ (on), 3.4mJ (off)
Input Type	Standard
Gate Charge	120 nC
Td (on/off) @ 25°C	-
Test Condition	600V, 30A, 47Ohm, 15V
Reverse Recovery Time (trr)	40 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Supplier Device Package	ISOPLUS247™

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