SGH15N60RUFTU related parameters_SGH15N60RUFTU PDF documentation_ON Semiconductor

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	24 A
Current - Collector Pulsed (Icm)	45 A
Vce(on) (Max) @ Vge, Ic	2.8V @ 15V, 15A
Power - Max	160 W
Switching Energy	320µJ (on), 356µJ (off)
Input Type	Standard
Gate Charge	42 nC
Td (on/off) @ 25°C	17ns/44ns
Test Condition	300V, 15A, 13Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3PN

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