MGW20N120 related parameters_MGW20N120 PDF documentation_Motorola

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	28 A
Current - Collector Pulsed (Icm)	56 A
Vce(on) (Max) @ Vge, Ic	4.99V @ 15V, 20A
Power - Max	174 W
Switching Energy	1.65mJ (off)
Input Type	Standard
Gate Charge	62 nC
Td (on/off) @ 25°C	88ns/190ns
Test Condition	720V, 20A, 20Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

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