IXYP10N65C3D1 related parameters_IXYP10N65C3D1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX3™, XPT™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	30 A
Current - Collector Pulsed (Icm)	54 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 10A
Power - Max	160 W
Switching Energy	240µJ (on), 110µJ (off)
Input Type	Standard
Gate Charge	18 nC
Td (on/off) @ 25°C	20ns/77ns
Test Condition	400V, 10A, 50Ohm, 15V
Reverse Recovery Time (trr)	170 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220

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