RJH1CV6DPK-00#T0 related parameters_RJH1CV6DPK-00#T0 PDF documentation_Renesas Electronics America Inc

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 30A
Power - Max	290 W
Switching Energy	2.3mJ (on), 1.7mJ (off)
Input Type	Standard
Gate Charge	105 nC
Td (on/off) @ 25°C	46ns/125ns
Test Condition	600V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr)	180 ns
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P

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