IXGR32N170AH1 related parameters_IXGR32N170AH1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	26 A
Current - Collector Pulsed (Icm)	200 A
Vce(on) (Max) @ Vge, Ic	5.2V @ 15V, 21A
Power - Max	200 W
Switching Energy	1.5mJ (off)
Input Type	Standard
Gate Charge	155 nC
Td (on/off) @ 25°C	46ns/260ns
Test Condition	1360V, 21A, 2.7Ohm, 15V
Reverse Recovery Time (trr)	230 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Supplier Device Package	ISOPLUS247™

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