RJH1CV7DPQ-E0#T2 related parameters_RJH1CV7DPQ-E0#T2 PDF documentation_Renesas Electronics America Inc

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	1.2 V
Current - Collector (Ic) (Max)	70 A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	2.3V @ 15V, 35A
Power - Max	320 W
Switching Energy	3.2mJ (on), 2.5mJ (off)
Input Type	Standard
Gate Charge	166 nC
Td (on/off) @ 25°C	53ns/185ns
Test Condition	600V, 35A, 5Ohm, 15V
Reverse Recovery Time (trr)	200 ns
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247

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