RJH60D1DPP-M0#T2 related parameters_RJH60D1DPP-M0#T2 PDF documentation_Renesas Electronics America Inc

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	20 A
Current - Collector Pulsed (Icm)	-
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 10A
Power - Max	30 W
Switching Energy	100µJ (on), 130µJ (off)
Input Type	Standard
Gate Charge	13 nC
Td (on/off) @ 25°C	30ns/42ns
Test Condition	300V, 10A, 5Ohm, 15V
Reverse Recovery Time (trr)	70 ns
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220FL

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