IXYN120N65B3D1 related parameters_IXYN120N65B3D1 PDF documentation_IXYS

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	GenX3™, XPT™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	650 V
Current - Collector (Ic) (Max)	250 A
Current - Collector Pulsed (Icm)	770 A
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 100A
Power - Max	830 W
Switching Energy	1.34mJ (on), 1.5mJ (off)
Input Type	Standard
Gate Charge	250 nC
Td (on/off) @ 25°C	30ns/168ns
Test Condition	400V, 50A, 2Ohm, 15V
Reverse Recovery Time (trr)	28 ns
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Supplier Device Package	SOT-227B

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