APT68GA60B2D40 related parameters_APT68GA60B2D40 PDF documentation_Microchip Technology

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	POWER MOS 8™
Package	Tube
IGBT Type	PT
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	121 A
Current - Collector Pulsed (Icm)	202 A
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 40A
Power - Max	520 W
Switching Energy	715µJ (on), 607µJ (off)
Input Type	Standard
Gate Charge	198 nC
Td (on/off) @ 25°C	21ns/133ns
Test Condition	400V, 40A, 4.7Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Supplier Device Package	-

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