STGB20NB32LZ related parameters_STGB20NB32LZ PDF documentation_STMicroelectronics

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	PowerMESH™
Package	Tube
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	375 V
Current - Collector (Ic) (Max)	40 A
Current - Collector Pulsed (Icm)	80 A
Vce(on) (Max) @ Vge, Ic	2V @ 4.5V, 20A
Power - Max	150 W
Switching Energy	11.8mJ (off)
Input Type	Standard
Gate Charge	51 nC
Td (on/off) @ 25°C	2.3µs/11.5µs
Test Condition	250V, 20A, 1kOhm, 4.5V
Reverse Recovery Time (trr)	-
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK

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