SGM2N60UFTF related parameters_SGM2N60UFTF PDF documentation_ON Semiconductor

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	600 V
Current - Collector (Ic) (Max)	2.4 A
Current - Collector Pulsed (Icm)	10 A
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 1.2A
Power - Max	2.1 W
Switching Energy	30µJ (on), 13µJ (off)
Input Type	Standard
Gate Charge	9 nC
Td (on/off) @ 25°C	15ns/80ns
Test Condition	300V, 1.2A, 200Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Supplier Device Package	SOT-223-4

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