HGT1S10N120BNS related parameters_HGT1S10N120BNS PDF documentation_ON Semiconductor

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	35 A
Current - Collector Pulsed (Icm)	80 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 10A
Power - Max	298 W
Switching Energy	320µJ (on), 800µJ (off)
Input Type	Standard
Gate Charge	100 nC
Td (on/off) @ 25°C	23ns/165ns
Test Condition	960V, 10A, 10Ohm, 15V
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	D2PAK (TO-263)

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