FGA50S110P related parameters_FGA50S110P PDF documentation_Fairchild Semiconductor

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Bulk
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1.1 V
Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	120 A
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 50A
Power - Max	300 W
Switching Energy	-
Input Type	Standard
Gate Charge	195 nC
Td (on/off) @ 25°C	-
Test Condition	-
Reverse Recovery Time (trr)	-
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3PN

Other

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