SI5519DU-T1-GE3 related parameters_SI5519DU-T1-GE3 PDF documentation_Vishay Siliconix

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	6A
Rds On (Max) @ Id, Vgs	36mOhm @ 6.1A, 4.5V
Vgs(th) (Max) @ Id	1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	660pF @ 10V
Power - Max	10.4W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® ChipFET™ Dual
Supplier Device Package	PowerPAK® ChipFet Dual

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