SQ3585EV-T1_GE3 related parameters_SQ3585EV-T1_GE3 PDF documentation_Vishay Siliconix

MOSFETs - Arrays

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Specifications

Description	Details
Series	Automotive, AEC-Q101, TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	3.57A (Tc), 2.5A (Tc)
Rds On (Max) @ Id, Vgs	77mOhm @ 1A, 4.5V, 166mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2.5nC @ 4.5V, 3.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1.67W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	6-TSOP

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