SI4310BDY-T1-E3 related parameters_SI4310BDY-T1-E3 PDF documentation_Vishay Siliconix

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	7.5A, 9.8A
Rds On (Max) @ Id, Vgs	11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	2370pF @ 15V
Power - Max	1.14W, 1.47W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	14-SOIC (0.154", 3.90mm Width)
Supplier Device Package	14-SOIC

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