NTTD1P02R2G related parameters_NTTD1P02R2G PDF documentation_ON Semiconductor

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	1.45A
Rds On (Max) @ Id, Vgs	160mOhm @ 1.45A, 4.5V
Vgs(th) (Max) @ Id	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	265pF @ 16V
Power - Max	500mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package	Micro8™

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