SI1912EDH-T1-E3 related parameters_SI1912EDH-T1-E3 PDF documentation_Vishay Siliconix

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	1.13A
Rds On (Max) @ Id, Vgs	280mOhm @ 1.13A, 4.5V
Vgs(th) (Max) @ Id	450mV @ 100µA (Min)
Gate Charge (Qg) (Max) @ Vgs	1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	570mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Supplier Device Package	SC-70-6 (SOT-363)

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