SI6562DQ-T1-E3 related parameters_SI6562DQ-T1-E3 PDF documentation_Vishay Siliconix

MOSFETs - Arrays

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Specifications

Description	Details
Series	TrenchFET®
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	-
Rds On (Max) @ Id, Vgs	30mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id	600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs	25nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	-
Power - Max	1W
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package	8-TSSOP

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