UPA606T-T1-A related parameters_UPA606T-T1-A PDF documentation_Renesas Electronics America Inc

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25°C	100mA
Rds On (Max) @ Id, Vgs	25Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	16pF @ 5V
Power - Max	300mW
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6
Supplier Device Package	6-Minimold

Other

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