BFQ18A,115 related parameters_BFQ18A,115 PDF documentation_NXP USA Inc.

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	18V
Frequency - Transition	4GHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 100mA, 10V
Current - Collector (Ic) (Max)	150mA
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	SOT-89-3

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