BLS3135-10,114 related parameters_BLS3135-10,114 PDF documentation_NXP USA Inc.

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	75V
Frequency - Transition	3.5GHz
Noise Figure (dB Typ @ f)	-
Gain	9dB
Power - Max	34W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 250mA, 5V
Current - Collector (Ic) (Max)	1.5A
Operating Temperature	200°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-445C
Supplier Device Package	CDFM2

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