NTE160 related parameters_NTE160 PDF documentation_NTE Electronics, Inc

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	20V
Frequency - Transition	700MHz
Noise Figure (dB Typ @ f)	5dB @ 800MHz
Gain	14dB
Power - Max	60mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 2mA, 10V
Current - Collector (Ic) (Max)	10mA
Operating Temperature	90°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-206AF, TO-72-4 Metal Can
Supplier Device Package	TO-72

Other

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