2SC5087-O(TE85L,F) related parameters_2SC5087-O(TE85L,F) PDF documentation_Toshiba Semiconductor and Storage

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1dB ~ 1.1dB @ 500MHz ~ 1GHz
Gain	-
Power - Max	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 20mA, 10V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-61AA
Supplier Device Package	SMQ

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