NTE23 related parameters_NTE23 PDF documentation_NTE Electronics, Inc

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,670(Ref. price)

Qty.	Unit Price	Ext. Price
1	$1.90120	$1.90120

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	14V
Frequency - Transition	2GHz
Noise Figure (dB Typ @ f)	3dB @ 500MHz
Gain	15dB
Power - Max	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce	25 @ 10mA, 10V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92

Other

Price advantage, NTE23 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
AT-32011-BLKG	Broadcom Limited	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 5.5V SOT143	No price	In Stock:19928
PH8909	MACOM Technology Solutions	Transistors - Bipolar - RF	Datasheet	TRANSISTOR	No price	In Stock:19930
75112	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF POWER TRANSISTOR	No price	In Stock:19932
MS2204	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 20V 1.09GHZ M115	No price	In Stock:19934
NESG3031M14-T3-A	Renesas Electronics America Inc	Transistors - Bipolar - RF	Datasheet	RF SMALL SIGNAL TRANSISTOR	$0.52250	In Stock:46529