MRF5812 related parameters_MRF5812 PDF documentation_Microsemi Corporation

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,696(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	5GHz
Noise Figure (dB Typ @ f)	2dB ~ 3dB @ 500MHz
Gain	13dB ~ 15.5dB
Power - Max	1.25W
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 50mA, 5V
Current - Collector (Ic) (Max)	200mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC

Other

Price advantage, MRF5812 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
SD1019-02	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF POWER TRANSISTOR	No price	In Stock:17070
UPA806T-T1	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS 2 NPN 6V 12GHZ 6SO	No price	In Stock:17072
MS3455	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF POWER TRANSISTOR	No price	In Stock:17074
80277H	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF POWER TRANSISTOR	No price	In Stock:17076
PH9105	MACOM Technology Solutions	Transistors - Bipolar - RF	Datasheet	TRANSISTOR	No price	In Stock:17078