UMIL100A related parameters_UMIL100A PDF documentation_Microsemi Corporation

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	31V
Frequency - Transition	225MHz ~ 400MHz
Noise Figure (dB Typ @ f)	-
Gain	7.2dB ~ 8.5dB
Power - Max	270W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 1A, 5V
Current - Collector (Ic) (Max)	20A
Operating Temperature	150°C (TJ)
Mounting Type	Chassis Mount
Package / Case	55JU
Supplier Device Package	55JU

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