BFT92E6327 related parameters_BFT92E6327 PDF documentation_Infineon Technologies

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	15V
Frequency - Transition	5GHz
Noise Figure (dB Typ @ f)	2dB ~ 3.2dB @ 900MHz ~ 1.8GHz
Gain	8dB ~ 13.5dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 15mA, 8V
Current - Collector (Ic) (Max)	25mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3

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