NE851M13-T3-A related parameters_NE851M13-T3-A PDF documentation_CEL

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	*
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5.5V
Frequency - Transition	4.5GHz
Noise Figure (dB Typ @ f)	1.9dB ~ 2.5dB @ 2GHz
Gain	4dB ~ 5.5dB @ 2GHZ
Power - Max	140mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 5mA, 1V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	SOT-3
Supplier Device Package	M13

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