MS1006 related parameters_MS1006 PDF documentation_Microsemi Corporation

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,494(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	55V
Frequency - Transition	30MHz
Noise Figure (dB Typ @ f)	-
Gain	14dB
Power - Max	127W
DC Current Gain (hFE) (Min) @ Ic, Vce	19 @ 1.4A, 6V
Current - Collector (Ic) (Max)	3.25A
Operating Temperature	200°C
Mounting Type	Stud Mount
Package / Case	M135
Supplier Device Package	M135

Other

Price advantage, MS1006 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
MRF422	MACOM Technology Solutions	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 35V 211-11	$75.42570	In Stock:20444
MS2210	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 65V 1.215GHZ M216	No price	In Stock:20466
2224-6P	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF POWER TRANSISTOR	No price	In Stock:20470
HFA3127BZ96	Renesas Electronics America Inc	Transistors - Bipolar - RF	Datasheet	RF TRANS 5 NPN 12V 8GHZ 16SOIC	$6.56060	In Stock:20476
MRF553GT	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF TRNS NPN 16V 175MHZ PWR MACRO	No price	In Stock:20478