2SC5011-A related parameters_2SC5011-A PDF documentation_CEL

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：17,028(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Strip
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	6.5GHz
Noise Figure (dB Typ @ f)	1.1dB @ 1GHz
Gain	13dB
Power - Max	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 20mA, 10V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-82A, SOT-343
Supplier Device Package	-

Other

Price advantage, 2SC5011-A is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
NE94433-T1B	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 15V 2GHZ SOT23	No price	In Stock:16984
DME800	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 65V 1.15GHZ 55ST-1	No price	In Stock:16986
2SC5632G0L	Panasonic Electronic Components	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 8V 1.1GHZ SMINI3-F2	No price	In Stock:3046
60158	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF POWER TRANSISTOR	No price	In Stock:16990
MS1227	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 18V 30MHZ M113	No price	In Stock:16992