BFP420E6327 related parameters_BFP420E6327 PDF documentation_Infineon Technologies

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5V
Frequency - Transition	25GHz
Noise Figure (dB Typ @ f)	1.1dB @ 1.8GHz
Gain	21dB
Power - Max	160mW
DC Current Gain (hFE) (Min) @ Ic, Vce	60 @ 20mA, 4V
Current - Collector (Ic) (Max)	35mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-82A, SOT-343
Supplier Device Package	PG-SOT343-4

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