MRF1150MB related parameters_MRF1150MB PDF documentation_MACOM Technology Solutions

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	70V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	-
Gain	9.8dB
Power - Max	150W
DC Current Gain (hFE) (Min) @ Ic, Vce	10 @ 5A, 5V
Current - Collector (Ic) (Max)	12A
Operating Temperature	-
Mounting Type	Chassis Mount
Package / Case	332A-03
Supplier Device Package	332A-03

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