NE85630-A related parameters_NE85630-A PDF documentation_CEL

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	4.5GHz
Noise Figure (dB Typ @ f)	1.2dB @ 1GHz
Gain	9dB
Power - Max	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 7mA, 3V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	SOT-323

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