BFP720FESDH6327XTSA1 related parameters_BFP720FESDH6327XTSA1 PDF documentation_Infineon Technologies

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4.7V
Frequency - Transition	45GHz
Noise Figure (dB Typ @ f)	0.5dB ~ 1.3dB @ 150MHz ~ 10GHz
Gain	10dB ~ 29dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 15mA, 3V
Current - Collector (Ic) (Max)	30mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-SMD, Flat Leads
Supplier Device Package	4-TSFP

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