MT3S16U(TE85L,F) related parameters_MT3S16U(TE85L,F) PDF documentation_Toshiba Semiconductor and Storage

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5V
Frequency - Transition	4GHz
Noise Figure (dB Typ @ f)	2.4dB @ 1GHz
Gain	4.5dBi
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 5mA, 1V
Current - Collector (Ic) (Max)	60mA
Operating Temperature	125°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM

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