EC3H02BA-TL-H related parameters_EC3H02BA-TL-H PDF documentation_ON Semiconductor

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1dB @ 1GHz
Gain	8.5dB
Power - Max	100mW
DC Current Gain (hFE) (Min) @ Ic, Vce	120 @ 20mA, 5V
Current - Collector (Ic) (Max)	70mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	3-XFDFN
Supplier Device Package	3-ECSP1006

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