BLW96/01,112 related parameters_BLW96/01,112 PDF documentation_Ampleon USA Inc.

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	55V
Frequency - Transition	235MHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	340W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 7A, 5V
Current - Collector (Ic) (Max)	12A
Operating Temperature	200°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-121B
Supplier Device Package	CRFM4

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