15GN01CA-TB-E related parameters_15GN01CA-TB-E PDF documentation_ON Semiconductor

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	8V
Frequency - Transition	1.5GHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 10mA, 5V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	3-CP

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