MRF8372G related parameters_MRF8372G PDF documentation_Microsemi Corporation

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	16V
Frequency - Transition	870MHz
Noise Figure (dB Typ @ f)	-
Gain	8dB ~ 9.5dB
Power - Max	2.2W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 50mA, 5V
Current - Collector (Ic) (Max)	200mA
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO

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