BF959ZL1G related parameters_BF959ZL1G PDF documentation_ON Semiconductor

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Box (TB)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	20V
Frequency - Transition	700MHz
Noise Figure (dB Typ @ f)	3dB @ 200MHz
Gain	-
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 20mA, 10V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package	TO-92-3

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