NE85639-A related parameters_NE85639-A PDF documentation_CEL

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	9GHz
Noise Figure (dB Typ @ f)	1.1dB @ 1GHz
Gain	13dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 20mA, 10V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-253-4, TO-253AA
Supplier Device Package	SOT-143

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