FGA25N120FTD related parameters_FGA25N120FTD PDF documentation_ON Semiconductor

Transistors - IGBTs - Single

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Specifications

Description	Details
Series	-
Package	Tube
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	50 A
Current - Collector Pulsed (Icm)	75 A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 25A
Power - Max	313 W
Switching Energy	340µJ (on), 900µJ (off)
Input Type	Standard
Gate Charge	160 nC
Td (on/off) @ 25°C	48ns/210ns
Test Condition	600V, 25A, 15Ohm, 15V
Reverse Recovery Time (trr)	770 ns
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P

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